? semiconductor components industries, llc, 2013 september, 2013 ? rev. 0 1 publication order number: njw44h11/d NJW44H11G 80 v npn, 10 a power transistor these series of plastic, silicon npn power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. features ? fast switching speeds ? high frequency ? these devices are pb ? free, halogen free/bfr free and are rohs compliant benefits ? reliable performance at higher powers ? symmetrical characteristics in complementary configurations ? accurate reproduction of input signal ? greater dynamic range ? high amplifier bandwidth applications ? high ? end consumer audio products ? home amplifiers ? home receivers maximum ratings (t a = 25 c) rating symbol max unit collector ? emitter voltage v ceo 80 vdc emitter ? base voltage v ebo 5.0 vdc collector current ? continuous i c 10 a collector current ? peak (note 1) i cm 20 a total power dissipation @ t c = 25 c p d 120 watts thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.04 c/w junction and storage temperature range t j , t stg ? 65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5 ms, duty cycle 10%. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 80 volt, 10 amps npn power transistors http://onsemi.com device package shipping ordering information to ? 3p plastic case 340ab marking diagram NJW44H11G to ? 3p (pb ? free) 30 units/rail xxx = tbd g = pb ? free package a = assembly location y = year ww = work week njwxxxg ayww 1 2 3 4 123 1 base emitter 3 collector 2, 4 npn
NJW44H11G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter sustaining voltage (i c = 30 madc, i b = 0) v ceo 80 ? ? vdc collector ? cutoff current (v ce = rated v ceo , v be = 0) i ces ? ? 10 adc emitter cutoff current (v be = 5.0 vdc) i ebo ? ? 10 adc on characteristics dc current gain (i c = 2 a, v ce = 2 v) (i c = 4 a, v ce = 2 v) h fe 100 80 ? ? 400 320 ? collector ? emitter saturation voltage (i c = 8 a, i b = 400 ma) v ce(sat) ? ? 1.0 v base ? emitter turn ? on voltage (i c = 8 a, v ce = 2.0 v) v be(on) ? ? 1.5 v dynamic characteristics output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? 65 ? pf cutoff frequency (i c = 500 ma, v ce = 5 v, f = 1.0 mhz) f t ? 85 ? mhz switching times delay and rise times (i c = 5.0 adc, i b1 = 0.5 a) t d + t r ? 300 ? ns storage time (i c = 5.0 adc, i b1 = i b2 = 0.5 a) t s ? 500 ? ns fall time (i c = 5.0 adc, i b1 = i b2 = 0.5 a) t f ? 140 ? ns
NJW44H11G http://onsemi.com 3 typical characteristics figure 1. dc current gain figure 2. dc current gain i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0 50 150 200 250 350 400 500 10 1 0.1 0.01 0 50 150 200 250 350 400 500 figure 3. collector emitter saturation voltage figure 4. collector emitter saturation voltage i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0 0.05 0.10 0.15 0.20 0.30 0.35 0.40 10 1 0.1 0.01 0 0.05 0.10 0.15 0.25 0.30 0.35 0.40 figure 5. base emitter saturation voltage figure 6. base emitter ?on? voltage i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 h fe , dc current gain h fe , dc current gain collector ? emitter saturation voltage (v) collector ? emitter saturation voltage (v) base ? emitter saturation voltage (v) 100 300 450 v ce = 2 v 150 c 25 c ? 55 c 100 300 450 v ce = 4 v 150 c 25 c ? 55 c v ce(sat) @ i c /i b = 10 150 c 25 c ? 55 c 0.25 0.20 150 c 25 c ? 55 c v ce(sat) @ i c /i b = 20 base ? emitter voltage (v) v be(sat) @ i c /i b = 10 150 c 25 c ? 55 c v be(on) @ v ce = 4 v 150 c 25 c ? 55 c
NJW44H11G http://onsemi.com 4 typical characteristics figure 7. output capacitance figure 8. current gain bandwidth product v cb , collector ? base voltage i c , collector current (a) 70 60 50 40 30 20 10 0 0 50 100 150 200 250 10 1 0.1 0.01 0 10 20 40 50 70 80 90 figure 9. power temperature derating figure 10. safe operating area (soa) t, temperature ( c) v ce , collector ? emitter voltage (v) 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 100 10 1 0.01 0.1 1 10 100 c ob , output capacitance (pf) f t , current bandwidth product (mhz) p d , power dissipation (w) i c , collector current (a) 80 t j = 25 c f = 1 mhz 30 60 v ce = 5 v f test = 1 mhz t j = 25 c 160 1 ms 10 ms 1 sec
NJW44H11G http://onsemi.com 5 package dimensions to ? 3p ? 3ld case 340ab ? 01 issue a g k l c e j h 123 4 d 3x s b m 0.25 a a p dim a min nom max millimeters 19.70 19.90 20.10 b 15.40 15.60 15.80 c 4.60 4.80 5.00 d 0.80 1.00 1.20 e 1.45 1.50 1.65 g 5.45 bsc h 1.20 1.40 1.60 j 0.55 0.60 0.75 k 19.80 20.00 20.20 l 18.50 18.70 18.90 u 5.00 ref p 3.30 3.50 3.70 q 3.10 3.20 3.50 w 2.80 3.00 3.20 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30mm from the terminal tip. 4. dimension a and b do not include mold flash, protrusions, or gate burrs. f 1.80 2.00 2.20 b g b q a (3 ) seating plane f u w style 1: pin 1. base 2. collector 3. emitter 4. collector style 2: pin 1. anode 2. cathode 3. anode 4. cathode style 3: pin 1. gate 2. drain 3. source 4. drain on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 njw44h11/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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